Functionalisation of carbon nanotubes for molecular electronicsPLANK, N. O. V; CHEUNG, R.Microelectronic engineering. 2004, Vol 73-74, pp 578-582, issn 0167-9317, 5 p.Conference Paper

The electrical characteristics of 4H-SiC Schottky diodes after inductively coupled plasma etchingPLANK, N. O. V; JIANG, Liudi; GUNDLACH, A. M et al.Journal of electronic materials. 2003, Vol 32, Num 9, pp 964-971, issn 0361-5235, 8 p.Article

Rare-earth mononitridesNATALI, F; RUCK, B. J; PLANK, N. O. V et al.Progress in materials science. 2013, Vol 58, Num 8, pp 1316-1360, issn 0079-6425, 45 p.Article

Dry etching of SiC in inductively coupled Cl₂/Ar plasmaJIANG, Liudi; PLANK, N. O. V; BLAUW, M. A et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 13, pp 1809-1814, issn 0022-3727, 6 p.Article

The backing layer dependence of open circuit voltage in ZnO/polymer composite solar cellsPLANK, N. O. V; WELLAND, M. E; MACMANUS-DRISCOLL, J. L et al.Thin solid films. 2008, Vol 516, Num 20, pp 7218-7222, issn 0040-6090, 5 p.Conference Paper

Epitaxial samarium disilicide films on silicon (0 0 1) substrates: growth, structural and electrical propertiesNATALI, F; PLANK, N. O. V; STEPHEN, J et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 13, issn 0022-3727, 135404.1-135404.7Article

An investigation into the growth conditions and defect states of laminar ZnO nanostructuresBENDALL, J. S; VISIMBERGA, G; SZACHOWICZ, M et al.Journal of material chemistry. 2008, Vol 18, Num 43, pp 5259-5266, issn 0959-9428, 8 p.Article

The etching of silicon carbide in inductively coupled SF₆/O₂ plasmaPLANK, N. O. V; BLAUW, M. A; VAN DER DRIFT, E. W. J. M et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 5, pp 482-487, issn 0022-3727, 6 p.Article

Surface characterization of inductively coupled plasma etched SiC in SF₆/O₂LIUDI JIANG; PLANK, N. O. V; CHEUNG, R et al.Microelectronic engineering. 2003, Vol 67-68, pp 369-375, issn 0167-9317, 7 p.Conference Paper

The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitridesRUCK, B. J; NATALI, F; PLANK, N. O. V et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 2954-2956, issn 0921-4526, 3 p.Conference Paper

Epitaxial growth of GdN on silicon substrate using an AIN buffer layerNATALI, F; PLANK, N. O. V; GALIPAUD, J et al.Journal of crystal growth. 2010, Vol 312, Num 24, pp 3583-3587, issn 0022-0248, 5 p.Article